Gain Switched Laser Diodes for Laser Radars and 3D Laser Imaging

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Gain Switched Laser Diodes for Laser Radars and 3D Laser Imaging

Hosted By: Laser Systems Technical Group

26 October 2017, 12:00 - 13:00

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Short (~ 100 ps) and high energy (~ 1nJ) laser pulses, without an afterpulsing structure, at repetition rates varying from kHz to a few MHz can be used in a number of applications including automotive safety devices, 3D imaging, laser tomography, time imaging, and spectroscopy. Gain switching of semiconductor lasers, known for their high efficiency, compactness, and ease of current pumping, is arguably the best way of producing such pulses.

In this webinar hosted by the OSA Laser Systems Technical Group, Dr. Eugene Avrutin from the University of York will present the design rules for such lasers, concentrating on the role of a large equivalent spot size (the active layer thickness to confinement factor ratio) in achieving high-energy afterpulsing-free operation. The webinar also will cover theoretical and experimental work on asymmetric-waveguide structures with bulk and Quantum Well active layers, combining large equivalent spot size with built-in single-transverse-mode operation. In addition, the operation of these lasers in prototype systems will be discussed. Possible future developments, including a Surface Emitting version of the laser design and an eye safe wavelength design, will be explored as well.

What You Will Learn:

  • The requirements of a laser source for time of flight laser radars and 3D imaging.
  • The principle of gain switching in lasers, the role of current source and laser design (the  equivalent spot size, the waveguide structure, bulk vs Quantum Well active layer, the use of a saturable absorber for enhancing gain switched behavior; edge emitting and surface emitting design).
  • The operation of a gain switched laser within a practical radar system.
Who Should Attend:
  • Researchers interested in high power picosecond pulse generation and time of flight laser radars.
 

Presenter

Eugene A. Arvutin, University of New York

Eugene A. Avrutin obtained his M.Sc. degree from St. Petersburg Technical University in 1986 and his Ph.D. from A. F. Ioffe Physico-Technical Institute, St.Petersburg, in 1994. He was with the Ioffe Institute (1986-1993) and with the University of Glasgow, UK (1993-1999), working on theory and simulation of semiconductor lasers, LEDs, and amplifiers. Since 2000, he has been a member of the Academic Staff at the Department of Electronics, University of York, UK, where his research concentrates on theory, modelling, and design of optoelectronic devices and subsystems.