Nick Holonyak, Jr. Award
Established in 1997, this award honors Nick Holonyak Jr., who has made distinguished contributions to the field of optics through the development of semiconductor based light emitting diodes and semiconductor lasers. The award is presented to an individual who has made significant contributions to optics based on semiconductor-based optical devices and materials, including basic science and technological applications.
This award is endowed by SDL Ventures, LLC, and Donald and Carol Scifres.
View the current Nick Holonyak Jr. Award Selection Committee.
for fundamental discoveries on growth and physics of semiconductor nanostructures leading to novel nanophotonic devices for information science and communications
Larry A. Coldren
for major contributions to photonic integrated circuits.
For pioneering and sustained contributions to quantum-well, quantum-dot and nanowire optoelectronic devices and their integration.
For his pioneering contribution to high-performance THz quantum-cascade lasers and their applications in imaging and sensing.
Ching Wan Tang
For the discovery of efficient thin-film organic light-emitting diodes (OLED), which has led to novel display and lighting products
For demonstrating a terahertz quantum cascade device, the first compact injection laser in the far infrared
Kent D. Choquette
For contributions to the development of vertical cavity surface-emitting lasers
For seminal contributions to quantum dot lasers and nanophotonic devices
For fundamental contributions to high-power semiconductor lasers including active photonic-crystal structures for high coherent power generation; single-lobe grating-surface-emitting distributed-feedback lasers; and high-power, high-efficiency sources based on aluminum-free technology
John E Bowers
For fundamental and technological advances in active hybrid silicon photonic devices including lasers, modulators, amplifiers and silicon based active photonic integrated circuits
Kam Yin Lau
For seminal contributions to high-speed direct modulation of semiconductor lasers through enhanced differential optical gain
Connie J. Chang-Hasnain
For contributions to the control of diode lasers: vertical cavity surface emitting laser arrays, injection locking and slow light
James J. Coleman
For a career of contributions to quantum well and strained-layer semiconductor lasers through innovative epitaxial growth methods and novel device designs
P. Daniel Dapkus
For seminal contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices
Peter G. Eliseev
For original and pioneering contributions to the physics and technology of semiconductor lasers, beginning with homojunctions, progressing to heterostructures of InGaAsP/InP, InGaAsSb/GaSb and including ultra-low-threshold quantum-dot structures
Joe Charles Campbell
For contributions to the development of high-speed, low-noise avalanche photodiodes
Pallab K. Bhattacharya
For fundamental contributions to the development and understanding of quantum-dot lasers and other quantum-confined photonic devices
For original demonstration and commercialization of GaN-based semiconductor lasers and LEDs
Zhores Ivanovich Alferov
For his original investigations of heterostructure injection lasers and cw room temperature semiconductor lasers
Dennis G. Deppe
For the development of the oxide-confined vertical cavity surface-emitting laser
Magnus George Craford
For his pioneering contributions and leadership in the research and development of visible-wavelength light-emitting-diode (LED) materials and devices, including the first yellow LED and high-brightness, red-orange-yellow InAlGaP LEDs that exceed in performance the incandescent lamp