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Nick Holonyak, Jr. Award
Presented to an individual who has made significant contributions to optics based on semiconductor-based optical devices and materials, including basic science and technological applications.
The award was established in 1997 to honor Nick Holonyak Jr., who made distinguished contributions to the field of optics through the development of semiconductor based light emitting diodes and semiconductor lasers. It is endowed by SDL Ventures, LLC, and Donald and Carol Scifres.
Winners
2024
For pioneering contributions to nitride semiconductor materials and optical devices that helped build the foundation for blue and UV LEDs
2023
For pioneering contributions to nanoscale science and engineering of ultra-small, sub-micrometer semiconductor light emitters and nanolasers for information processing systems applications
2022
For his pioneering work in creating GaAs diode lasers and inventive contributions to compound semiconductors and laser physics.
2021
For wide-ranging contributions to the development and application of III-V semiconductor devices especially including gallium nitride micro-LEDs and optically-pumped semiconductor lasers
2020
For significant contributions to hetero-epitaxy of compound semiconductors on silicon for future integrated lasers and advancing the field of light-emitting diode microdisplays
2018
For fundamental discoveries on growth and physics of semiconductor nanostructures leading to novel nanophotonic devices for information science and communications
2016
For pioneering and sustained contributions to quantum-well, quantum-dot and nanowire optoelectronic devices and their integration
2015
For his pioneering contribution to high-performance THz quantum-cascade lasers and their applications in imaging and sensing
2014
For the discovery of efficient thin-film organic light-emitting diodes (OLED), which has led to novel display and lighting products
2013
For demonstrating a terahertz quantum cascade device, the first compact injection laser in the far infrared
2012
For contributions to the development of vertical cavity surface-emitting lasers
2010
For fundamental contributions to high-power semiconductor lasers including active photonic-crystal structures for high coherent power generation; single-lobe grating-surface-emitting distributed-feedback lasers; and high-power, high-efficiency sources based on aluminum-free technology
2009
For fundamental and technological advances in active hybrid silicon photonic devices including lasers, modulators, amplifiers and silicon based active photonic integrated circuits
2008
For seminal contributions to high-speed direct modulation of semiconductor lasers through enhanced differential optical gain
2007
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For contributions to the control of diode lasers: vertical cavity surface emitting laser arrays, injection locking and slow light
2006
For a career of contributions to quantum well and strained-layer semiconductor lasers through innovative epitaxial growth methods and novel device designs
2005
For seminal contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices
2004
For original and pioneering contributions to the physics and technology of semiconductor lasers, beginning with homojunctions, progressing to heterostructures of InGaAsP/InP, InGaAsSb/GaSb and including ultra-low-threshold quantum-dot structures
2003
For contributions to the development of high-speed, low-noise avalanche photodiodes
2002
For fundamental contributions to the development and understanding of quantum-dot lasers and other quantum-confined photonic devices
2001
For original demonstration and commercialization of GaN-based semiconductor lasers and LEDs
2000
For his original investigations of heterostructure injection lasers and cw room temperature semiconductor lasers
1999
For the development of the oxide-confined vertical cavity surface-emitting laser
1998
For his pioneering contributions and leadership in the research and development of visible-wavelength light-emitting-diode (LED) materials and devices, including the first yellow LED and high-brightness, red-orange-yellow InAlGaP LEDs that exceed in performance the incandescent lamp
* Deceased
